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Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM 150 GB 170 DLC
Hochstzulassige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collctor current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode I2t - value, Diode Isolations-Prufspannung insulation test voltage tp = 1 ms TC = 80 C TC = 25 C tP = 1 ms, TC = 80C VCES IC,nom. IC ICRM 1700 150 300 300 V A A A
TC=25C, Transistor
Ptot
1250
W
VGES
+/- 20V
V
IF
150
A
IFRM
300
A
VR = 0V, tp = 10ms, TVj = 125C
2 It
4.500
A2s
RMS, f = 50 Hz, t = 1 min.
VISOL
3,4
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazitat input capacitance Ruckwirkungskapazitat reverse transfer capacitance IC = 150A, VGE = 15V, Tvj = 25C IC = 150A, VGE = 15V, Tvj = 125C IC = 7mA, VCE = VGE, Tvj = 25C VGE(th) VCE sat
min.
4,5
typ.
2,6 3,1 5,5
max.
3,2 3,6 6,5 V V V
VGE = -15V ... +15V
QG
-
1,8
-
C
f = 1MHz,Tvj = 25C,VCE = 25V, VGE = 0V
Cies
-
10
-
nF
f = 1MHz,Tvj = 25C,VCE = 25V, VGE = 0V VCE = 1700V, VGE = 0V, Tvj = 25C
Cres ICES
-
0,5 0,05 4
0,3
nF mA mA
Kollektor-Emitter Reststrom collector-emitter cut-off current
VCE = 1700V, VGE = 0V, Tvj = 125C
Gate-Emitter Reststrom gate-emitter leakage current
VCE = 0V, VGE = 20V, Tvj = 25C
IGES
-
-
200
nA
prepared by: Regine Mallwitz approved by: Chr. Lubke; 28.11.2000
date of publication: 28.11.2000 revision: 2 (Series)
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BSM150GB170DLC
Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM 150 GB 170 DLC
Charakteristische Werte / Characteristic values
Transistor / Transistor
Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) IC = 150A, VCE = 900V VGE = 15V, RG = 10, Tvj = 25C VGE = 15V, RG = 10, Tvj = 125C Anstiegszeit (induktive Last) rise time (inductive load) IC = 150A, VCE = 900V VGE = 15V, RG = 10, Tvj = 25C VGE = 15V, RG = 10, Tvj = 125C Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) IC = 150A, VCE = 900V VGE = 15V, RG = 10, Tvj = 25C VGE = 15V, RG = 10, Tvj = 125C Fallzeit (induktive Last) fall time (inductive load) IC = 150A, VCE = 900V VGE = 15V, RG = 10, Tvj = 25C VGE = 15V, RG = 10, Tvj = 125C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data Modulinduktivitat stray inductance module Modulleitungswiderstand, Anschlusse - Chip module lead resistance, terminals - chip pro Zweig / per arm IC = 150A, VCE = 900V, VGE = 15V RG = 10, Tvj = 125C, LS = 60nH IC = 150A, VCE = 900V, VGE = 15V RG = 10, Tvj = 125C, LS = 60nH tP 10sec, VGE 15V TVj125C, VCC=1000V, VCEmax=VCES -LsCE *dI/dt ISC LsCE 600 30 A nH Eoff 46 mWs Eon 70 mWs tf 0,03 0,03 s s td,off 0,8 0,9 s s tr 0,1 0,1 s s td,on 0,1 0,1 s s
min.
typ.
max.
RCC'+EE'
-
0,6
-
m
Charakteristische Werte / Characteristic values
Diode / Diode
Durchlaspannung forward voltage Ruckstromspitze peak reverse recovery current IF = 150A, VGE = 0V, Tvj = 25C IF = 150A, VGE = 0V, Tvj = 125C IF = 150A, - diF/dt = 1700A/sec VR = 900V, VGE = -10V, Tvj = 25C VR = 900V, VGE = -10V, Tvj = 125C Sperrverzogerungsladung recovered charge IF = 150A, - diF/dt = 1700A/sec VR = 900V, VGE = -10V, Tvj = 25C VR = 900V, VGE = -10V, Tvj = 125C Abschaltenergie pro Puls reverse recovery energy IF = 150A, - diF/dt = 1700A/sec VR = 900V, VGE = -10V, Tvj = 25C VR = 900V, VGE = -10V, Tvj = 125C Erec 15 30 mWs Qr 35 60 As As IRM 110 130 A A VF
min.
-
typ.
2,1 2,1
max.
2,5 2,5 V V
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BSM150GB170DLC
Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM 150 GB 170 DLC
Thermische Eigenschaften / Thermal properties
min.
Innerer Warmewiderstand thermal resistance, junction to case Ubergangs-Warmewiderstand thermal resistance, case to heatsink Hochstzulassige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Transistor / transistor, DC Diode/Diode, DC pro Modul / per module Paste = 1 W/m*K / grease = 1 W/m*K RthCK RthJC -
typ.
-
max.
0,1 0,24 0,012 K/W K/W K/W
Tvj
-
-
150
C
Top
-40
-
125
C
Tstg
-40
-
125
C
Mechanische Eigenschaften / Mechanical properties
Gehause, siehe Anlage case, see appendix Innere Isolation internal insulation Kriechstrecke creepage distance Luftstrecke clearance CTI comperative tracking index Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlusse terminal connection torque Gewicht weight max. 5 Nm Al2O3
20
mm
11
mm
terminals M6
max. G 340
5
Nm g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes.
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BSM150GB170DLC
Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM 150 GB 170 DLC
Ausgangskennlinie (typisch) Output characteristic (typical) I C = f (VCE)
VGE = 15V
300
250
200
IC [A]
150
100
Tj = 25C Tj = 125C
50
0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
VCE [V]
Ausgangskennlinienfeld (typisch) Output characteristic (typical)
300
I C = f (VCE)
Tvj = 125C
250
VGE = 19V VGE = 15V VGE = 13V
200
VGE = 11V VGE = 9V
IC [A]
150
100
50
0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
VCE [V]
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BSM150GB170DLC
Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM 150 GB 170 DLC
Ubertragungscharakteristik (typisch) Transfer characteristic (typical) I C = f (VGE)
VCE = 20V
300
Tj = 25C Tj = 125C
250
200
IC [A]
150
100
50
0 5 6 7 8 9 10 11 12 13
VGE [V]
Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical)
300
Tj = 25C Tj = 125C
I F = f (VF)
250
200
IF [A]
150
100
50
0 0,0 0,5 1,0 1,5 2,0 2,5 3,0
VF [V]
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BSM150GB170DLC
Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM 150 GB 170 DLC
Schaltverluste (typisch) Eon = f (IC) , E off = f (IC) , E rec = f (IC) Rgon = Rgoff =10, VCE = 900V, Tj = 125C Switching losses (typical)
250
Eoff
200
Eon Erec
E [mJ]
150
100
50
0 0 50 100 150 200 250 300
IC [A]
Schaltverluste (typisch) Switching losses (typical)
160 140 120 100 E [mJ] 80 60 40 20 0 0 10 20
Eoff Eon Erec
E on = f (RG) , E off = f (RG) , E rec = f (RG)
IC = 150A , VCE = 900V , Tj = 125C
30
40
50
RG []
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BSM150GB170DLC
Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM 150 GB 170 DLC
Transienter Warmewiderstand Transient thermal impedance
1
ZthJC = f (t)
0,1
ZthJC [K / W]
0,01
Zth:Diode Zth:IGBT
0,001 0,001
0,01
0,1
1
10
100
t [sec] i ri [K/kW] : IGBT i [sec] : IGBT ri [K/kW] : Diode i [sec]
: Diode 1 11,16 0,0047 44,67 0,0062 2 32,28 0,0356 88,51 0,0473 3 48,09 0,0613 88,51 0,0473 4 8,47 0,4669 18,32 0,2322
Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA)
350
Rg = 10 Ohm, Tvj= 125C
300 IC,Modul
IC [A]
250
IC,Chip
200
150
100
50
0 0 200 400 600 800 1000 1200 1400 1600 1800
VCE [V]
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BSM150GB170DLC
Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM 150 GB 170 DLC
vorlaufige Daten preliminary data
8(8)
BSM150GB170DLC

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